Fabrication of ultrathin nano-porous membranes and semiconductor nanowires
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cheap and large-scale nanowires, ultrathin porous membranes, low temperature, reinforced metallized polymer
Scientists at the Max Planck Institute for Intelligent Systems have developed a method for large-scale and cost-effective production of semiconductor nanowires and nanowire networks. As illustrated in Fig. 1, the method employs a thin film of metal (typically Al) with a columnar grain structure. Upon exposure of the metal to a low temperature (70-400°C) vapor flux, semiconductor nanowires grow at the grain boundary network in the metal. Removing the metal film with standard etching techniques, results in a free-standing, well-defined nanowire network. Size, length, density and composition of the nanowire network can be precisely tailored by the method and are less sensitive to flux parameters.
This technology has potential applications not only for battery electrodes, solar cells, or similar electric components, but may also be used to enhance the mechanical stability of materials and surfaces:
For example reinforced metallized polymer films can be created, e.g., for the packing industry, or surfaces with improved anti-scratch capabilities can be generated based on this technology. Furthermore, the freestanding nanowire network generated based on this technology can serve as a nanoporous membrane with ultrahigh nanopore density (see Fig. 1(d, e)) which is suitable for applications e.g. in filtration devices.
Novel method for fabrication of nanowires and nanowire networks:
- highly scalable for industrial application
- low processing temperature from 70 - 400 °C
- compatible with existing equipment in semiconductor industries, e.g. vacuum evaporation, chemical vapor deposition, sputtering growth systems
- robust fabrication of nanostructure tailored in length, size, composition, and density on the substrate
- wide range of applications possible (battery electrodes, filtration devices, reinforced metallized polymers…)
- Priority patent WO 2014037380 A1
- national patents pending in EP, US, and CN
- Ref.-Nr.: 0104-4458-BC (513,1 KiB)
Dr. Bernd Ctortecka, M. Phil.
Telefon: 089 / 29 09 19-20